A Level Shifter Using Aluminum-Doped Zinc Tin Oxide Thin Film Transistors with Negative Threshold Voltages

نویسندگان

  • Tong-Hun Hwang
  • Ik-Seok Yang
  • Kang-Nam Kim
  • Doo-Hee Cho
  • Sang-Hee Ko Park
  • Chi-Sun Hwang
  • Chun-Won Byun
  • Oh-Kyong Kwon
چکیده

• IMID 2009 DIGEST Abstract A new level shifter using n-channel aluminum-doped zinc tin oxide (AZTO) thin film transistors (TFTs) was proposed to integrate driving circuits on qVGA panels for mobile display applications. The circuit used positive feedback loop to overcome limitations of circuits designed with oxide TFTs which is depletion mode n-channel TFTs. The measured results shows that the proposed circuit shifts 10 V input voltage to 20 V output voltage and its power consumption is 0.46 mW when the supply voltage is 20 V and the operating frequency is 10 kHz.

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تاریخ انتشار 2009